IXFY4N60P3 Priser (USD) [58086stk Lager]
- 1 pcs$0.74004
- 10 pcs$0.66980
- 100 pcs$0.53809
- 500 pcs$0.41852
- 1,000 pcs$0.32803
- Delnummer:
- IXFY4N60P3
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 600V 4A TO-252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Transistorer - spesialformål, Dioder - Zener - Arrays, Dioder - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Bridge likerettere, Dioder - Zener - Singel and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in IXYS IXFY4N60P3 electronic components. IXFY4N60P3 can be shipped within 24 hours after order. If you have any demands for IXFY4N60P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFY4N60P3 Produktegenskaper
Delnummer :
IXFY4N60P3
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 600V 4A TO-252
Serie :
HiPerFET™, Polar3™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.2 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
6.9nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
365pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
114W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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