SQS482ENW-T1_GE3 Priser (USD) [225754stk Lager]
- 1 pcs$0.16384
- Delnummer:
- SQS482ENW-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CHAN 30V POWERPAK 1212-.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Dioder - likerettere - singel, Transistorer - spesialformål, Transistorer - IGBT-er - moduler, Power Driver-moduler, Dioder - likerettere - matriser, Dioder - Zener - Arrays and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQS482ENW-T1_GE3 electronic components. SQS482ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS482ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS482ENW-T1_GE3 Produktegenskaper
Delnummer :
SQS482ENW-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CHAN 30V POWERPAK 1212-
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
8.5 mOhm @ 16.4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1865pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
62W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® 1212-8W
Pakke / sak :
PowerPAK® 1212-8W
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