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- Delnummer:
- RJK6025DPD-00#J2
- Produsent:
- Renesas Electronics America
- Detaljert beskrivelse:
- MOSFET N-CH 600V 1A MP3A.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - moduler, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - RF and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Renesas Electronics America RJK6025DPD-00#J2 electronic components. RJK6025DPD-00#J2 can be shipped within 24 hours after order. If you have any demands for RJK6025DPD-00#J2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK6025DPD-00#J2 Produktegenskaper
Delnummer :
RJK6025DPD-00#J2
Produsent :
Renesas Electronics America
Beskrivelse :
MOSFET N-CH 600V 1A MP3A
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
17.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
5nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
37.5pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
29.7W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
MP-3A
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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