IPA80R1K4P7XKSA1 Priser (USD) [61527stk Lager]
- 1 pcs$0.60206
- 10 pcs$0.53224
- 100 pcs$0.42073
- 500 pcs$0.30865
- 1,000 pcs$0.24367
- Delnummer:
- IPA80R1K4P7XKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 800V 4A TO220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPA80R1K4P7XKSA1 electronic components. IPA80R1K4P7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA80R1K4P7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA80R1K4P7XKSA1 Produktegenskaper
Delnummer :
IPA80R1K4P7XKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 800V 4A TO220
Serie :
CoolMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.4 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 700µA
Gate Lading (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 500V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
24W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3F
Pakke / sak :
TO-220-3 Full Pack
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