RJU002N06FRAT106 Priser (USD) [1230545stk Lager]
- 1 pcs$0.03006
- Delnummer:
- RJU002N06FRAT106
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- 2.5V DRIVE NCH MOSFET CORRESPON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - singel, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - RF, Dioder - Zener - Arrays, Tyristorer - DIAC, SIDAC and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor RJU002N06FRAT106 electronic components. RJU002N06FRAT106 can be shipped within 24 hours after order. If you have any demands for RJU002N06FRAT106, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJU002N06FRAT106 Produktegenskaper
Delnummer :
RJU002N06FRAT106
Produsent :
Rohm Semiconductor
Beskrivelse :
2.5V DRIVE NCH MOSFET CORRESPON
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, vgs :
2.3 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
-
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
18pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
200mW (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
UMT3
Pakke / sak :
SC-70, SOT-323
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