NVMFS5832NLWFT1G Priser (USD) [2580stk Lager]
- 1,500 pcs$0.26847
- Delnummer:
- NVMFS5832NLWFT1G
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 40V 120A SO8FL.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC, Transistorer - FET, MOSFET - En, Tyristorer - SCR, Transistorer - FET, MOSFET - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Arrays and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in ON Semiconductor NVMFS5832NLWFT1G electronic components. NVMFS5832NLWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS5832NLWFT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5832NLWFT1G Produktegenskaper
Delnummer :
NVMFS5832NLWFT1G
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 40V 120A SO8FL
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
4.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.7W (Ta), 127W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
5-DFN (5x6) (8-SOFL)
Pakke / sak :
8-PowerTDFN
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