IRFB23N15DPBF Priser (USD) [52836stk Lager]
- 1 pcs$0.78603
- 10 pcs$0.70910
- 100 pcs$0.56995
- 500 pcs$0.44331
- 1,000 pcs$0.34746
- Delnummer:
- IRFB23N15DPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 150V 23A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Singel, Dioder - likerettere - singel, Transistorer - FET, MOSFET - RF, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFB23N15DPBF electronic components. IRFB23N15DPBF can be shipped within 24 hours after order. If you have any demands for IRFB23N15DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB23N15DPBF Produktegenskaper
Delnummer :
IRFB23N15DPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 150V 23A TO-220AB
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
150V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
90 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.8W (Ta), 136W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
Siste nytt
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