IPB60R040C7ATMA1 Priser (USD) [12957stk Lager]
- 1 pcs$3.26659
- 1,000 pcs$3.25034
- Delnummer:
- IPB60R040C7ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 50A TO263-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Arrays, Transistorer - IGBT-er - Arrays, Power Driver-moduler, Tyristorer - TRIAC and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB60R040C7ATMA1 electronic components. IPB60R040C7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R040C7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB60R040C7ATMA1 Produktegenskaper
Delnummer :
IPB60R040C7ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 50A TO263-3
Serie :
CoolMOS™ C7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
40 mOhm @ 24.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 1.24mA
Gate Lading (Qg) (Max) @ Vgs :
107nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4340pF @ 400V
FET-funksjon :
-
Effektdissipasjon (maks) :
227W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-3
Pakke / sak :
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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