APT11N80BC3G Priser (USD) [15456stk Lager]
- 1 pcs$2.93506
- 10 pcs$2.62084
- 100 pcs$2.14894
- 500 pcs$1.74012
- 1,000 pcs$1.46758
- Delnummer:
- APT11N80BC3G
- Produsent:
- Microsemi Corporation
- Detaljert beskrivelse:
- MOSFET N-CH 800V 11A TO-247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - En, Power Driver-moduler, Dioder - RF, Dioder - Bridge likerettere, Transistorer - programmerbar enhet, Transistorer - IGBT-er - singel and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Microsemi Corporation APT11N80BC3G electronic components. APT11N80BC3G can be shipped within 24 hours after order. If you have any demands for APT11N80BC3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT11N80BC3G Produktegenskaper
Delnummer :
APT11N80BC3G
Produsent :
Microsemi Corporation
Beskrivelse :
MOSFET N-CH 800V 11A TO-247
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
450 mOhm @ 7.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 680µA
Gate Lading (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1585pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
156W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247 [B]
Pakke / sak :
TO-247-3
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