TK13E25D,S1X(S Priser (USD) [50552stk Lager]
- 1 pcs$0.85509
- 50 pcs$0.85083
- Delnummer:
- TK13E25D,S1X(S
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 250V 13A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - IGBT-er - singel, Transistorer - JFET-er, Transistorer - programmerbar enhet, Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays and Dioder - likerettere - singel ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK13E25D,S1X(S electronic components. TK13E25D,S1X(S can be shipped within 24 hours after order. If you have any demands for TK13E25D,S1X(S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK13E25D,S1X(S Produktegenskaper
Delnummer :
TK13E25D,S1X(S
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 250V 13A TO-220AB
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
250 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
102W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3
Pakke / sak :
TO-220-3
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