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- Delnummer:
- IPB160N04S2L03ATMA2
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH TO262-7.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Singel, Transistorer - programmerbar enhet, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge likerettere and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB160N04S2L03ATMA2 electronic components. IPB160N04S2L03ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB160N04S2L03ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB160N04S2L03ATMA2 Produktegenskaper
Delnummer :
IPB160N04S2L03ATMA2
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH TO262-7
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
2.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
230nC @ 5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
300W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-7-3
Pakke / sak :
TO-263-7, D²Pak (6 Leads + Tab)
Siste nytt
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