IXFP5N100PM Priser (USD) [27344stk Lager]
- 1 pcs$1.65703
- 10 pcs$1.47855
- 100 pcs$1.21241
- 500 pcs$0.93141
- 1,000 pcs$0.78553
- Delnummer:
- IXFP5N100PM
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 1000V 2.3A TO-220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - likerettere - matriser, Tyristorer - SCR-er - moduler, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Arrays and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in IXYS IXFP5N100PM electronic components. IXFP5N100PM can be shipped within 24 hours after order. If you have any demands for IXFP5N100PM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP5N100PM Produktegenskaper
Delnummer :
IXFP5N100PM
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 1000V 2.3A TO-220
Serie :
HiPerFET™, PolarP2™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
1000V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.8 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
6V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
33.4nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1830pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
42W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220 Isolated Tab
Pakke / sak :
TO-220-3 Full Pack, Isolated Tab
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