TSM60NB900CP ROG Priser (USD) [213558stk Lager]
- 1 pcs$0.17320
- Delnummer:
- TSM60NB900CP ROG
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CHANNEL 600V 4A TO252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - RF, Tyristorer - TRIAC, Dioder - Variabel kapasitet (Varicaps, Varactors) and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM60NB900CP ROG electronic components. TSM60NB900CP ROG can be shipped within 24 hours after order. If you have any demands for TSM60NB900CP ROG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB900CP ROG Produktegenskaper
Delnummer :
TSM60NB900CP ROG
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CHANNEL 600V 4A TO252
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
900 mOhm @ 1.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
9.6nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
315pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
36.8W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252, (D-Pak)
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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