IRFI4110GPBF Priser (USD) [21748stk Lager]
- 1 pcs$1.71432
- 10 pcs$1.53011
- 100 pcs$1.25454
- 500 pcs$0.96378
- 1,000 pcs$0.81283
- Delnummer:
- IRFI4110GPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 72A TO220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - TRIAC, Transistorer - IGBT-er - singel, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - RF, Dioder - Bridge likerettere, Transistorer - spesialformål and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFI4110GPBF electronic components. IRFI4110GPBF can be shipped within 24 hours after order. If you have any demands for IRFI4110GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI4110GPBF Produktegenskaper
Delnummer :
IRFI4110GPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 72A TO220AB
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
4.5 mOhm @ 43A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
290nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9540pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
61W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB Full-Pak
Pakke / sak :
TO-220-3 Full Pack
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