RFD3055LESM9A Priser (USD) [341742stk Lager]
- 1 pcs$0.10823
- 2,500 pcs$0.10700
- 5,000 pcs$0.09962
- 12,500 pcs$0.09839
- Delnummer:
- RFD3055LESM9A
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 60V 11A TO-252AA.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Transistorer - IGBT-er - singel, Tyristorer - SCR-er - moduler, Dioder - Zener - Singel, Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - En, Dioder - Variabel kapasitet (Varicaps, Varactors) and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in ON Semiconductor RFD3055LESM9A electronic components. RFD3055LESM9A can be shipped within 24 hours after order. If you have any demands for RFD3055LESM9A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFD3055LESM9A Produktegenskaper
Delnummer :
RFD3055LESM9A
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 60V 11A TO-252AA
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, vgs :
107 mOhm @ 8A, 5V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
11.3nC @ 10V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
38W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252AA
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
Siste nytt
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