IPB80N06S405ATMA2 Priser (USD) [120670stk Lager]
- 1 pcs$0.30652
- 1,000 pcs$0.28120
- Delnummer:
- IPB80N06S405ATMA2
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 60V 80A TO263-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - TRIAC, Dioder - Zener - Singel, Tyristorer - DIAC, SIDAC and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB80N06S405ATMA2 electronic components. IPB80N06S405ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB80N06S405ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB80N06S405ATMA2 Produktegenskaper
Delnummer :
IPB80N06S405ATMA2
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 60V 80A TO263-3
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
5.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 60µA
Gate Lading (Qg) (Max) @ Vgs :
81nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6500pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
107W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-3-2
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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