IRLR3110ZTRRPBF Priser (USD) [115751stk Lager]
- 1 pcs$0.31954
- 3,000 pcs$0.30306
- Delnummer:
- IRLR3110ZTRRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 42A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - TRIAC, Dioder - likerettere - matriser, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - Arrays, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - singel and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRLR3110ZTRRPBF electronic components. IRLR3110ZTRRPBF can be shipped within 24 hours after order. If you have any demands for IRLR3110ZTRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR3110ZTRRPBF Produktegenskaper
Delnummer :
IRLR3110ZTRRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 42A DPAK
Serie :
HEXFET®
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
14 mOhm @ 38A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
48nC @ 4.5V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
3980pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
140W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D-Pak
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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