SPD15P10PGBTMA1 Priser (USD) [119957stk Lager]
- 1 pcs$0.30834
- 2,500 pcs$0.29601
- Delnummer:
- SPD15P10PGBTMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET P-CH 100V 15A TO252-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Transistorer - FET, MOSFET - RF, Dioder - Zener - Singel, Power Driver-moduler, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Singel, Dioder - RF and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies SPD15P10PGBTMA1 electronic components. SPD15P10PGBTMA1 can be shipped within 24 hours after order. If you have any demands for SPD15P10PGBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPD15P10PGBTMA1 Produktegenskaper
Delnummer :
SPD15P10PGBTMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET P-CH 100V 15A TO252-3
Serie :
Automotive, AEC-Q101, SIPMOS®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
240 mOhm @ 10.6A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1.54mA
Gate Lading (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1280pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
128W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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