SI4100DY-T1-E3 Priser (USD) [150065stk Lager]
- 1 pcs$0.24648
- 2,500 pcs$0.23145
- Delnummer:
- SI4100DY-T1-E3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 100V 6.8A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Bridge likerettere, Tyristorer - DIAC, SIDAC, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - RF, Dioder - Zener - Singel and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI4100DY-T1-E3 electronic components. SI4100DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4100DY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4100DY-T1-E3 Produktegenskaper
Delnummer :
SI4100DY-T1-E3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 100V 6.8A 8-SOIC
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
63 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta), 6W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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