SQJ968EP-T1_GE3 Priser (USD) [178202stk Lager]
- 1 pcs$0.20756
- 3,000 pcs$0.17541
- Delnummer:
- SQJ968EP-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Bridge likerettere, Tyristorer - SCR, Transistorer - JFET-er, Dioder - likerettere - matriser, Tyristorer - SCR-er - moduler and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQJ968EP-T1_GE3 electronic components. SQJ968EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ968EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ968EP-T1_GE3 Produktegenskaper
Delnummer :
SQJ968EP-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2 N-CH 60V POWERPAK SO8
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
23.5A (Tc)
Rds On (Max) @ Id, vgs :
33.6 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
18.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
714pF @ 30V
Kraft - Maks :
42W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TA)
Monteringstype :
Surface Mount
Pakke / sak :
PowerPAK® SO-8 Dual
Leverandørenhetspakke :
PowerPAK® SO-8 Dual
Siste nytt
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