BSM180C12P2E202 Priser (USD) [164stk Lager]
- 1 pcs$281.91240
- Delnummer:
- BSM180C12P2E202
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- BSM180C12P2E202 IS A SIC SILICO.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Singel, Tyristorer - TRIAC, Transistorer - JFET-er, Dioder - likerettere - singel and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor BSM180C12P2E202 electronic components. BSM180C12P2E202 can be shipped within 24 hours after order. If you have any demands for BSM180C12P2E202, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM180C12P2E202 Produktegenskaper
Delnummer :
BSM180C12P2E202
Produsent :
Rohm Semiconductor
Beskrivelse :
BSM180C12P2E202 IS A SIC SILICO
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
SiC (Silicon Carbide Junction Transistor)
Drenering til kildespenning (Vdss) :
1200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
204A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Gate Lading (Qg) (Max) @ Vgs :
-
Vgs (maks) :
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds :
20000pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
1360W (Tc)
Driftstemperatur :
175°C (TJ)
Monteringstype :
Chassis Mount
Leverandørenhetspakke :
Module
Pakke / sak :
Module
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