R5011ANX Priser (USD) [54689stk Lager]
- 1 pcs$0.78603
- 10 pcs$0.69572
- 100 pcs$0.54989
- 500 pcs$0.42643
- 1,000 pcs$0.31846
- Delnummer:
- R5011ANX
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 500V 11A TO220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - Arrays and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor R5011ANX electronic components. R5011ANX can be shipped within 24 hours after order. If you have any demands for R5011ANX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R5011ANX Produktegenskaper
Delnummer :
R5011ANX
Produsent :
Rohm Semiconductor
Beskrivelse :
MOSFET N-CH 500V 11A TO220
Serie :
-
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
500 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
50W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220FM
Pakke / sak :
TO-220-3 Full Pack
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