Toshiba Semiconductor and Storage - TK1K9A60F,S4X

KEY Part #: K6398364

TK1K9A60F,S4X Priser (USD) [102769stk Lager]

  • 1 pcs$0.38047

Delnummer:
TK1K9A60F,S4X
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
PB-F POWER MOSFET TRANSISTOR TO-.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Transistorer - JFET-er, Dioder - Zener - Arrays, Tyristorer - DIAC, SIDAC, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - RF, Dioder - likerettere - singel and Transistorer - IGBT-er - moduler ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage TK1K9A60F,S4X electronic components. TK1K9A60F,S4X can be shipped within 24 hours after order. If you have any demands for TK1K9A60F,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK1K9A60F,S4X Produktegenskaper

Delnummer : TK1K9A60F,S4X
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : PB-F POWER MOSFET TRANSISTOR TO-
Serie : U-MOSIX
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 1.9 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 400µA
Gate Lading (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (maks) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 490pF @ 300V
FET-funksjon : -
Effektdissipasjon (maks) : 30W (Tc)
Driftstemperatur : 150°C
Monteringstype : Through Hole
Leverandørenhetspakke : TO-220SIS
Pakke / sak : TO-220-3 Full Pack

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