IPI084N06L3GXKSA1 Priser (USD) [99327stk Lager]
- 1 pcs$0.39366
- 500 pcs$0.34163
- Delnummer:
- IPI084N06L3GXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH TO262-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Dioder - RF, Transistorer - JFET-er, Dioder - Bridge likerettere, Tyristorer - TRIAC, Tyristorer - SCR-er - moduler, Power Driver-moduler and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPI084N06L3GXKSA1 electronic components. IPI084N06L3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPI084N06L3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI084N06L3GXKSA1 Produktegenskaper
Delnummer :
IPI084N06L3GXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH TO262-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
8.4 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 34µA
Gate Lading (Qg) (Max) @ Vgs :
29nC @ 4.5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4900pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
79W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO262-3-1
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
Siste nytt
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