SSM6J503NU,LF Priser (USD) [745784stk Lager]
- 1 pcs$0.04960
- Delnummer:
- SSM6J503NU,LF
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET P CH 20V 6A 2-2AA1A.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Bridge likerettere, Dioder - Variabel kapasitet (Varicaps, Varactors), Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, Transistorer - JFET-er and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage SSM6J503NU,LF electronic components. SSM6J503NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6J503NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6J503NU,LF Produktegenskaper
Delnummer :
SSM6J503NU,LF
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET P CH 20V 6A 2-2AA1A
Serie :
U-MOSVI
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, vgs :
32.4 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
12.8nC @ 10V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
840pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
6-UDFNB (2x2)
Pakke / sak :
6-WDFN Exposed Pad
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