TPH4R10ANL,L1Q Priser (USD) [137732stk Lager]
- 1 pcs$0.26854
- Delnummer:
- TPH4R10ANL,L1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - En, Dioder - likerettere - matriser, Transistorer - programmerbar enhet, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - moduler and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPH4R10ANL,L1Q electronic components. TPH4R10ANL,L1Q can be shipped within 24 hours after order. If you have any demands for TPH4R10ANL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH4R10ANL,L1Q Produktegenskaper
Delnummer :
TPH4R10ANL,L1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
X35 PB-F POWER MOSFET TRANSISTOR
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
92A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
4.1 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6.3nF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta), 67W (Tc)
Driftstemperatur :
150°C
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SOP Advance (5x5)
Pakke / sak :
8-PowerVDFN
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