IPP80N08S406AKSA1 Priser (USD) [61723stk Lager]
- 1 pcs$0.63349
- 500 pcs$0.52830
- Delnummer:
- IPP80N08S406AKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH TO220-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - spesialformål, Dioder - RF, Tyristorer - SCR-er - moduler, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - RF, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Singel and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP80N08S406AKSA1 electronic components. IPP80N08S406AKSA1 can be shipped within 24 hours after order. If you have any demands for IPP80N08S406AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP80N08S406AKSA1 Produktegenskaper
Delnummer :
IPP80N08S406AKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH TO220-3
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
5.8 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 90µA
Gate Lading (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
150W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3-1
Pakke / sak :
TO-220-3
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