Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET 2N-CH 30V 4A UDFN6
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A
Rds On (Max) @ Id, vgs :
46 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
280pF @ 15V
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
6-WDFN Exposed Pad
Leverandørenhetspakke :
6-µDFN(2x2)