TK3A65DA(STA4,QM) Priser (USD) [75908stk Lager]
- 1 pcs$0.56944
- 50 pcs$0.56661
- Delnummer:
- TK3A65DA(STA4,QM)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 650V 2.5A TO-220SIS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel, Dioder - likerettere - singel, Transistorer - spesialformål, Dioder - RF, Transistorer - Bipolar (BJT) - Arrays and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK3A65DA(STA4,QM) electronic components. TK3A65DA(STA4,QM) can be shipped within 24 hours after order. If you have any demands for TK3A65DA(STA4,QM), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK3A65DA(STA4,QM) Produktegenskaper
Delnummer :
TK3A65DA(STA4,QM)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 650V 2.5A TO-220SIS
Serie :
π-MOSVII
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.51 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ Id :
4.4V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
490pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
35W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220SIS
Pakke / sak :
TO-220-3 Full Pack
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