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- Delnummer:
- IRF6810STR1PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N CH 25V 16A S1.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Power Driver-moduler, Transistorer - FET, MOSFET - En, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays, Tyristorer - TRIAC and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF6810STR1PBF electronic components. IRF6810STR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6810STR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6810STR1PBF Produktegenskaper
Delnummer :
IRF6810STR1PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N CH 25V 16A S1
Serie :
HEXFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
5.2 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 25µA
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1038pF @ 13V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.1W (Ta), 20W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET S1
Pakke / sak :
DirectFET™ Isometric S1
Siste nytt
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