TPH1110FNH,L1Q Priser (USD) [125094stk Lager]
- 1 pcs$0.30352
- 5,000 pcs$0.30201
- Delnummer:
- TPH1110FNH,L1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 250V 15A 8-SOP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Tyristorer - TRIAC, Tyristorer - SCR-er - moduler, Tyristorer - DIAC, SIDAC, Dioder - Zener - Arrays, Transistorer - spesialformål, Dioder - Zener - Singel and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPH1110FNH,L1Q electronic components. TPH1110FNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH1110FNH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH1110FNH,L1Q Produktegenskaper
Delnummer :
TPH1110FNH,L1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 250V 15A 8-SOP
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
112 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 300µA
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.6W (Ta), 57W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SOP Advance (5x5)
Pakke / sak :
8-PowerVDFN
Siste nytt
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