SIE810DF-T1-GE3 Priser (USD) [51551stk Lager]
- 1 pcs$0.76228
- 3,000 pcs$0.75848
- Delnummer:
- SIE810DF-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 20V 60A POLARPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - singel, Dioder - Zener - Singel, Dioder - RF, Transistorer - JFET-er, Transistorer - IGBT-er - singel, Dioder - Bridge likerettere, Transistorer - IGBT-er - Arrays and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIE810DF-T1-GE3 electronic components. SIE810DF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIE810DF-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIE810DF-T1-GE3 Produktegenskaper
Delnummer :
SIE810DF-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 20V 60A POLARPAK
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, vgs :
1.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
300nC @ 10V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
13000pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
5.2W (Ta), 125W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
10-PolarPAK® (L)
Pakke / sak :
10-PolarPAK® (L)
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