SISF00DN-T1-GE3 Priser (USD) [134082stk Lager]
- 1 pcs$0.27586
- Delnummer:
- SISF00DN-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET DUAL N-CH 30V POWERPAK 12.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - TRIAC, Tyristorer - SCR, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - Arrays, Tyristorer - SCR-er - moduler and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SISF00DN-T1-GE3 electronic components. SISF00DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISF00DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISF00DN-T1-GE3 Produktegenskaper
Delnummer :
SISF00DN-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET DUAL N-CH 30V POWERPAK 12
Serie :
TrenchFET® Gen IV
Delstatus :
Active
FET Type :
2 N-Channel (Dual) Common Drain
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
60A (Tc)
Rds On (Max) @ Id, vgs :
5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 15V
Kraft - Maks :
69.4W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
PowerPAK® 1212-8SCD
Leverandørenhetspakke :
PowerPAK® 1212-8SCD
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