TK100A08N1,S4X Priser (USD) [24740stk Lager]
- 1 pcs$1.82891
- 50 pcs$1.47141
- 100 pcs$1.34061
- 500 pcs$1.02990
- 1,000 pcs$0.86859
- Delnummer:
- TK100A08N1,S4X
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 80V 214A TO220SIS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Dioder - RF, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Dioder - Zener - Singel, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Arrays and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK100A08N1,S4X electronic components. TK100A08N1,S4X can be shipped within 24 hours after order. If you have any demands for TK100A08N1,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK100A08N1,S4X Produktegenskaper
Delnummer :
TK100A08N1,S4X
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 80V 214A TO220SIS
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
3.2 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 40V
FET-funksjon :
-
Effektdissipasjon (maks) :
45W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220SIS
Pakke / sak :
TO-220-3 Full Pack
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