Diodes Incorporated - ZXMN10A11GTA

KEY Part #: K6407572

ZXMN10A11GTA Priser (USD) [257918stk Lager]

1 pcs$0.14341
1,000 pcs$0.12877

Delnummer:: ZXMN10A11GTA

Produsent:: Diodes Incorporated

Detaljert beskrivelse:: MOSFET N-CH 100V 1.7A SOT223.

Manufacturer's standard lead time:: På lager

Holdbarhet:: Ett år

Brikke fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåte:

Familiekategorier:: KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - spesialformål, Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Arrays, Dioder - RF, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Singel and Dioder - Bridge likerettere ...

Konkurransefordel:: We specialize in Diodes Incorporated ZXMN10A11GTA electronic components. ZXMN10A11GTA can be shipped within 24 hours after order. If you have any demands for ZXMN10A11GTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

ZXMN10A11GTA Produktegenskaper

Delnummer : ZXMN10A11GTA

Produsent : Diodes Incorporated

Beskrivelse : MOSFET N-CH 100V 1.7A SOT223

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 100V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, vgs : 350 mOhm @ 2.6A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 5.4nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 274pF @ 50V

FET-funksjon : -

Effektdissipasjon (maks) : 2W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : SOT-223

Pakke / sak : TO-261-4, TO-261AA

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