CSD17313Q2Q1T Priser (USD) [384544stk Lager]
- 1 pcs$0.09619
- 1,750 pcs$0.08638
- Delnummer:
- CSD17313Q2Q1T
- Produsent:
- Texas Instruments
- Detaljert beskrivelse:
- MOSFET N-CH 30V 5A 6WSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Dioder - RF, Transistorer - JFET-er, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - RF, Dioder - Bridge likerettere, Tyristorer - TRIAC and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Texas Instruments CSD17313Q2Q1T electronic components. CSD17313Q2Q1T can be shipped within 24 hours after order. If you have any demands for CSD17313Q2Q1T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD17313Q2Q1T Produktegenskaper
Delnummer :
CSD17313Q2Q1T
Produsent :
Texas Instruments
Beskrivelse :
MOSFET N-CH 30V 5A 6WSON
Serie :
NexFET™
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
3V, 8V
Rds On (Max) @ Id, vgs :
30 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id :
1.8V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
2.7nC @ 4.5V
Vgs (maks) :
+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds :
340pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.4W (Ta), 17W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
6-WSON (2x2)
Pakke / sak :
6-WDFN Exposed Pad
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