TK6Q65W,S1Q Priser (USD) [91009stk Lager]
- 1 pcs$0.58952
- 75 pcs$0.47262
- 150 pcs$0.41353
- 525 pcs$0.30336
- 1,050 pcs$0.23950
- Delnummer:
- TK6Q65W,S1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 650V 5.8A IPAK-OS.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Tyristorer - DIAC, SIDAC, Tyristorer - SCR-er - moduler, Tyristorer - SCR, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - Arrays, Power Driver-moduler and Dioder - likerettere - singel ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK6Q65W,S1Q electronic components. TK6Q65W,S1Q can be shipped within 24 hours after order. If you have any demands for TK6Q65W,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6Q65W,S1Q Produktegenskaper
Delnummer :
TK6Q65W,S1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 650V 5.8A IPAK-OS
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.05 Ohm @ 2.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 180µA
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
390pF @ 300V
FET-funksjon :
-
Effektdissipasjon (maks) :
60W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
I-PAK
Pakke / sak :
TO-251-3 Stub Leads, IPak
Siste nytt
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