IPC100N04S51R9ATMA1 Priser (USD) [178908stk Lager]
- 1 pcs$0.20674
- 5,000 pcs$0.20344
- Delnummer:
- IPC100N04S51R9ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- N-CHANNEL30/40V.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Dioder - Zener - Arrays, Transistorer - spesialformål, Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - Arrays, Dioder - Zener - Singel, Dioder - likerettere - singel and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPC100N04S51R9ATMA1 electronic components. IPC100N04S51R9ATMA1 can be shipped within 24 hours after order. If you have any demands for IPC100N04S51R9ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPC100N04S51R9ATMA1 Produktegenskaper
Delnummer :
IPC100N04S51R9ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
N-CHANNEL30/40V
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
7V, 10V
Rds On (Max) @ Id, vgs :
1.9 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.4V @ 50µA
Gate Lading (Qg) (Max) @ Vgs :
65nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3770pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
100W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TDSON-8-34
Pakke / sak :
8-PowerTDFN
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