TSM80N1R2CH C5G Priser (USD) [58817stk Lager]
- 1 pcs$0.66478
- Delnummer:
- TSM80N1R2CH C5G
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET N-CH 800V 5.5A TO251.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Tyristorer - SCR, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - Arrays, Power Driver-moduler, Transistorer - IGBT-er - singel and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM80N1R2CH C5G electronic components. TSM80N1R2CH C5G can be shipped within 24 hours after order. If you have any demands for TSM80N1R2CH C5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM80N1R2CH C5G Produktegenskaper
Delnummer :
TSM80N1R2CH C5G
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET N-CH 800V 5.5A TO251
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.2 Ohm @ 2.75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
19.4nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
685pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
110W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-251 (IPAK)
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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