Infineon Technologies - SPP20N65C3XKSA1

KEY Part #: K6416549

SPP20N65C3XKSA1 Priser (USD) [15560stk Lager]

  • 1 pcs$2.36656
  • 10 pcs$2.11228
  • 100 pcs$1.73217
  • 500 pcs$1.40262
  • 1,000 pcs$1.18294

Delnummer:
SPP20N65C3XKSA1
Produsent:
Infineon Technologies
Detaljert beskrivelse:
MOSFET N-CH 650V 20.7A TO-220-3.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - moduler, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - JFET-er, Dioder - Zener - Arrays, Dioder - Bridge likerettere and Tyristorer - DIAC, SIDAC ...
Konkurransefordel:
We specialize in Infineon Technologies SPP20N65C3XKSA1 electronic components. SPP20N65C3XKSA1 can be shipped within 24 hours after order. If you have any demands for SPP20N65C3XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPP20N65C3XKSA1 Produktegenskaper

Delnummer : SPP20N65C3XKSA1
Produsent : Infineon Technologies
Beskrivelse : MOSFET N-CH 650V 20.7A TO-220-3
Serie : CoolMOS™
Delstatus : Active
FET Type : N-Channel
Teknologi : MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) : 650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, vgs : 190 mOhm @ 13.1A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 1mA
Gate Lading (Qg) (Max) @ Vgs : 114nC @ 10V
Vgs (maks) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2400pF @ 25V
FET-funksjon : -
Effektdissipasjon (maks) : 208W (Tc)
Driftstemperatur : -55°C ~ 150°C (TJ)
Monteringstype : Through Hole
Leverandørenhetspakke : PG-TO220-3-1
Pakke / sak : TO-220-3

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