IXFP6N120P Priser (USD) [13592stk Lager]
- 1 pcs$3.33169
- 10 pcs$2.99940
- 100 pcs$2.46629
- 500 pcs$2.06634
- 1,000 pcs$1.79971
- Delnummer:
- IXFP6N120P
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 1200V 6A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF, Dioder - RF, Transistorer - IGBT-er - Arrays and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in IXYS IXFP6N120P electronic components. IXFP6N120P can be shipped within 24 hours after order. If you have any demands for IXFP6N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP6N120P Produktegenskaper
Delnummer :
IXFP6N120P
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 1200V 6A TO-220AB
Serie :
HiPerFET™, PolarP2™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
1200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
92nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2830pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
250W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
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