Toshiba Semiconductor and Storage - BAS516,H3F

KEY Part #: K6458607

BAS516,H3F Priser (USD) [3056256stk Lager]

  • 1 pcs$0.01210

Delnummer:
BAS516,H3F
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
DIODE GEN PURP 100V 250MA ESC. Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Bridge likerettere, Dioder - RF, Dioder - Zener - Singel, Transistorer - IGBT-er - moduler, Tyristorer - TRIAC and Transistorer - IGBT-er - singel ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage BAS516,H3F electronic components. BAS516,H3F can be shipped within 24 hours after order. If you have any demands for BAS516,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS516,H3F Produktegenskaper

Delnummer : BAS516,H3F
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : DIODE GEN PURP 100V 250MA ESC
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 100V
Nåværende - Gjennomsnittlig rettet (Io) : 250mA
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.25V @ 150mA
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 3ns
Nåværende - Omvendt lekkasje @ Vr : 200nA @ 80V
Capacitance @ Vr, F : 0.35pF @ 0V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : SC-79, SOD-523
Leverandørenhetspakke : ESC
Driftstemperatur - veikryss : 150°C (Max)

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