Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS PREBIAS NPN 200MW SMINI
Transistortype :
NPN - Pre-Biased
Nåværende - Samler (Ic) (Maks) :
800mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Motstand - base (R1) :
2.2 kOhms
Motstand - Emitter Base (R2) :
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 50mA
Nåværende - Collector Cutoff (Max) :
500nA
Frekvens - overgang :
300MHz
Monteringstype :
Surface Mount
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
Leverandørenhetspakke :
S-Mini