IPAN65R650CEXKSA1 Priser (USD) [71938stk Lager]
- 1 pcs$0.47663
- 10 pcs$0.42186
- 100 pcs$0.31549
- 500 pcs$0.24467
- 1,000 pcs$0.19316
- Delnummer:
- IPAN65R650CEXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET NCH 650V 10.1A TO220-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Power Driver-moduler, Dioder - Zener - Arrays and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPAN65R650CEXKSA1 electronic components. IPAN65R650CEXKSA1 can be shipped within 24 hours after order. If you have any demands for IPAN65R650CEXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPAN65R650CEXKSA1 Produktegenskaper
Delnummer :
IPAN65R650CEXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET NCH 650V 10.1A TO220-3
Serie :
CoolMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
650 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 210µA
Gate Lading (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 100V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
28W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220 Full Pack
Pakke / sak :
TO-220-3 Full Pack
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