DMJ70H600SH3 Priser (USD) [54655stk Lager]
- 1 pcs$0.71540
- 75 pcs$0.66690
- Delnummer:
- DMJ70H600SH3
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET BVDSS 651V 800V TO251.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - FET, MOSFET - RF, Dioder - likerettere - singel, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Singel, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Diodes Incorporated DMJ70H600SH3 electronic components. DMJ70H600SH3 can be shipped within 24 hours after order. If you have any demands for DMJ70H600SH3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMJ70H600SH3 Produktegenskaper
Delnummer :
DMJ70H600SH3
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET BVDSS 651V 800V TO251
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
700V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
600 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
18.2nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
643pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
113W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-251
Pakke / sak :
TO-251-3, IPak, Short Leads
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