HAT2266H-EL-E Priser (USD) [96812stk Lager]
- 1 pcs$0.43055
- 2,500 pcs$0.42841
- Delnummer:
- HAT2266H-EL-E
- Produsent:
- Renesas Electronics America
- Detaljert beskrivelse:
- MOSFET N-CH 60V 30A LFPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Dioder - Bridge likerettere, Transistorer - IGBT-er - Arrays, Transistorer - JFET-er, Dioder - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Power Driver-moduler and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Renesas Electronics America HAT2266H-EL-E electronic components. HAT2266H-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2266H-EL-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HAT2266H-EL-E Produktegenskaper
Delnummer :
HAT2266H-EL-E
Produsent :
Renesas Electronics America
Beskrivelse :
MOSFET N-CH 60V 30A LFPAK
Serie :
-
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
12 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 4.5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3600pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
23W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
LFPAK
Pakke / sak :
SC-100, SOT-669
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