TK56E12N1,S1X Priser (USD) [67611stk Lager]
- 1 pcs$0.63936
- 50 pcs$0.63618
- Delnummer:
- TK56E12N1,S1X
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 120V 56A TO-220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - FET, MOSFET - Arrays, Dioder - likerettere - matriser, Transistorer - spesialformål, Dioder - Zener - Singel, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Singel and Dioder - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK56E12N1,S1X electronic components. TK56E12N1,S1X can be shipped within 24 hours after order. If you have any demands for TK56E12N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK56E12N1,S1X Produktegenskaper
Delnummer :
TK56E12N1,S1X
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 120V 56A TO-220
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
120V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
56A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
7 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4200pF @ 60V
FET-funksjon :
-
Effektdissipasjon (maks) :
168W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220
Pakke / sak :
TO-220-3
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