IRFS38N20DPBF Priser (USD) [337stk Lager]
- 1 pcs$1.36617
- 10 pcs$1.22162
- 100 pcs$0.95034
- 500 pcs$0.76955
- 1,000 pcs$0.64902
- Delnummer:
- IRFS38N20DPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 200V 43A D2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - JFET-er, Tyristorer - SCR-er - moduler, Dioder - Zener - Arrays, Transistorer - IGBT-er - singel, Tyristorer - SCR and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFS38N20DPBF electronic components. IRFS38N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFS38N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS38N20DPBF Produktegenskaper
Delnummer :
IRFS38N20DPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 200V 43A D2PAK
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
54 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.8W (Ta), 300W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D2PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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