IRFR13N20DPBF Priser (USD) [8477stk Lager]
- 3,000 pcs$0.24466
- Delnummer:
- IRFR13N20DPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 200V 13A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Dioder - RF, Transistorer - FET, MOSFET - En, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Power Driver-moduler, Transistorer - Bipolar (BJT) - Singel and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFR13N20DPBF electronic components. IRFR13N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFR13N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR13N20DPBF Produktegenskaper
Delnummer :
IRFR13N20DPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 200V 13A DPAK
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
235 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
830pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
110W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D-Pak
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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