SQM100N10-10_GE3 Priser (USD) [50012stk Lager]
- 1 pcs$0.78183
- 800 pcs$0.70366
- Delnummer:
- SQM100N10-10_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 100V 100A TO-263.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Dioder - RF, Transistorer - programmerbar enhet, Tyristorer - TRIAC, Power Driver-moduler, Dioder - Bridge likerettere, Transistorer - IGBT-er - Arrays and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQM100N10-10_GE3 electronic components. SQM100N10-10_GE3 can be shipped within 24 hours after order. If you have any demands for SQM100N10-10_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM100N10-10_GE3 Produktegenskaper
Delnummer :
SQM100N10-10_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 100V 100A TO-263
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
10.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
185nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8050pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
375W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-263 (D2Pak)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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